| PART |
Description |
Maker |
| MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
|
ON Semiconductor
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 66500 |
MICROCOUPLER, HIGH SPEED-HIGH GAIN
|
Micropac Industries
|
| 27C64-25E/P 27C64-25E/J 27C64-25E/TS 27C64-25E/SO |
330MHz, Gain of 1/Gain of 2 Closed-Loop Buffers
Evaluation Kit for the MAX4159, MAX4259
High-Speed, Low-Distortion, Differential Line Receivers
SOT23, Rail-to-Rail, Fixed-Gain, Gain Amps/Open-Loop Op Amps x8存储
x8 EPROM x8存储
|
Microchip Technology, Inc.
TUSONIX, Inc.
|
| ADA4898-1 ADA4898-1YRDZ ADA4898-1YRDZ-R7 ADA4898-1 |
High Voltage, Low Noise, Low Distortion, Unity Gain Stable, High Speed Op Amp
|
Analog Devices
|
| ADA4898-1YRDZ-R7 ADA4898-1YRD-EBZ |
High Voltage, Low Noise, Low Distortion,Unity-Gain Stable, High Speed Op Amp
|
Analog Devices
|
| LT1028A LT1128A LT1028CSW |
Ultralow Noise Precision High Speed Op Amps
Unity Gain Stable Ultra-Low Noise Precision High Speed Op Amp
Ultra Low Noise Precision High Speed Op Amps
|
Linear Technology
|
| BFR183 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
|
| AGB3307 AGB3307S24Q1 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
Gain Block Amplifiers
50-ohm High Linearity Low Noise Wideband Gain Block
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
